RS0028E_15 Datasheet, PDF (1/3 Pages) Solid States Devices, Inc – Schottky Silicon Carbide Centertap Rectifier

Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information ^1/
SSR24C __ CT J __
│ │ │ └ Screening^2/
│ ││
__ = Not Screened
│ ││
TV = TX Level
│ ││
│ ││
TXV = TXV Level
S = S Level
│ │ └Package J = TO-257
││
│ └ Configuration CT = Common Cathode
│
CA = Common Anode
│
└ Voltage 30 = 300 V 40 = 400 V
50 = 500 V 60 = 600 V
SSR24C60CTJ &
SSR24C60CAJ Series
24 Amp
Schottky Silicon Carbide
Centertap Rectifier
600 Volts
Features:
 World's Smallest Hermetic SiC Centertap Rectifier
 High Voltage, 600V
 Very High Operating Temperature, 250°C
 No Recovery Time (tfr or trr)
 High Current Operation, 24A
 Hermetically Sealed, Isolated Packaging
 TX, TXV, and S Level screening available
Maximum Ratings^3/
Peak Repetitive and Peak Surge Reverse
Voltage
Average Rectified Forward Current
(Resistive Load, 60 Hz, Sine Wave)
Non Repetitive Peak Surge Current
(8.3 ms Pulse, Non-repetitive Half Sine Wave, per leg)
Power Dissipation
(T_C = 25°C)
Operating & Storage Temperature ^4/
SSR24C30
SSR24C40
SSR24C50
SSR24C60
Per Leg
Total
Symbol
V_RRM
V_RSM
I_O
I_FSM
P_D
Top & Tstg
Value
300
400
500
600
12
24
50
120
-55 to +250
Units
Volts
Amps
Amps
Watts
°C
Maximum Thermal Resistance
Junction to Case
R_θJC
1
NOTES:
1/ For ordering information, price, operating curves, and availability – contact
factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ All Electrical Characteristics @ 25°C Unless Otherwise Specified.
4/ If high temp operation is desired (>175°C) consult factory for soldering
consideration.
3
°C/W
TO-257 (J)
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RS0028E
DOC