RS0024 Datasheet, PDF (1/2 Pages) Solid States Devices, Inc – Schottky Silicon Carbide Centertap Rectifier

Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information ^1/
SSR40C 30 CT S.5 TX
│ │ │ └ Screening __ = Not Screened
│││
TV = TX Level
│││
TXV= TXV Level
│││
S = S Level
│ │ └ Package ^2/ S.5 = SMD.5
││
G = Cerpack
││
M = TO-254
│ └ Configuration CT = Centertap
│
└ Voltage 20 = 200 V
30 = 300 V
World’s First Silicon Carbide
Centertap Rectifier
SSR40C30CT Series
40A / 300V
Schottky Silicon Carbide
Centertap Rectifier
Features:
• World's 1st Hermetic 40A SiC Centertap Rectifier
• High Voltage 300V
• Very High Operating Temperature, 250ºC
• No Recovery Time (tfr or trr)
• High Current Operation, 40A
• Hermetic Packaging
• TX, TXV, S Level screening available
• Higher Voltage upon Request
Maximum Ratings
Peak Repetitive and Peak Surge Reverse Voltage
SSR40C20
SSR40C30
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave)
Per Leg
Total
Non Repetitive Peak Surge Current
(8.3 ms Pulse, Half Sine Wave Superimposed on I_O, per leg)
Power Dissipation
S.5 & G Package
M Package
Operating & Storage Temperature
Symbol
V_RRM
V_RSM
Io
I_FSM
P_D
Top & Tstg
Value
200
300
20
40
36
60
45
-55 to +250
Units
Volts
Amps
Amps
Watts
ºC
Maximum Thermal Resistance
Junction to Case
S.5 & G Package
M Package
R_θJC
1.3
1.6
1
TO-254 (M)
Cerpack (G)
SMD .5 (S.5)
ºC/W
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RS0024D
DOC