RS0022 Datasheet, PDF (1/2 Pages) Solid States Devices, Inc – Schottky Silicon Carbide Centertap Rectifier

Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information ^1/
SSR04C 60 CT S.5 TX
│ │ │ └ Screening __ = Not Screened
│││
TV = TX Level
│││
TXV= TXV Level
│││
S = S Level
│││
│ │ └ Package ^2/ S.5 = SMD.5
││
/39 = Low Profile TO-39
││
│ └ Configuration CT = Centertap
│
└ Voltage 50 = 500 V
60 = 600 V
World’s First Silicon Carbide
Centertap Rectifier
SSR04C60CT Series
4A / 600V
Schottky Silicon Carbide
Centertap Rectifier
Features:
• World's First Hermetic SiC Centertap Rectifier
• High Voltage, 600V
• Very High Operating Temperature, 250ºC
• No Recovery Time (tfr or trr)
• High Current Operation, 4A
• Hermetically Sealed Packaging
• TX, TXV, S Level screening available
Maximum Ratings
Peak Repetitive and Peak Surge Reverse Voltage
SSR04C50
SSR04C60
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave)
Per Leg
Total
Non Repetitive Peak Surge Current
(8.3 ms Pulse, Half Sine Wave Superimposed on I_O, per leg)
Power Dissipation
Free Air, T_A = 25ºC
Heatsunk, T_C = 25ºC
Operating & Storage Temperature ^4/
Symbol
V_RRM
V_RSM
Io
I_FSM
P_D
Top & Tstg
Value
500
600
2
4
4
1.3
5
-55 to +250
Units
Volts
Amps
Amps
Watts
ºC
Maximum Thermal Resistance
Junction to Case
1
TO-39 (/39)
Junction to Ambient
Junction to Case
R_θJC
SMD .5 (S.5)
175
45
ºC/W
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RS0022B
DOC