RH0177B Datasheet, PDF (1/2 Pages) Solid States Devices, Inc – HYPER FAST RECTIFIER

Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information ^1/
SDR1 __ __ __
⏐ ⏐ L Screening^2/ = None
⏐⏐
⏐⏐
⏐⏐
TX = TX Level
TXV = TXV Level
S = S Level
⏐ ^L Package ____ = Axial
⏐
SMS = Surface Mount Square Tab
L Voltage
A = 50 V
B = 100 V
D = 200 V
G = 400 V
K = 800 V
M = 1000 V
N = 1200 V
J = 600 V
1N6686-1N6687
and
1N6686US-1N6687US
20 AMP
100-200 Volts
40 nsec
HYPER FAST RECTIFIER
Features:
• Replaces DO-4 and DO-5 (1N5816, 1N6306)
• High Current Version of 1N5811
• Hyper Fast Recovery
• PIV to 200 Volts
• Low Reverse Leakage Current
• Hermetically Sealed Void-Free Construction^3/
• Monolithic Single Chip Construction
• High Surge Rating
• Low Thermal Resistance
• Available in Surface Mount Versions (-US Suffix)
• TX, TXV, and S-Level Screening Available^2/
Maximum Ratings
Symbol
Value
Peak Repetitive Reverse and
DC Blocking Voltage
1N6686 & 1N6686US
1N6687 & 1N6687US
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave, T_A = 25ºC)
Repetitive Peak Surge Current
(8.3 ms Pulse, Half Sine Wave Superimposed on Io, Allow Junction to
Reach Equilibrium Between Pulses, T_A = 25ºC)
Operating & Storage Temperature
Maximum Thermal Resistance
Junction to Leads, L = 3/8 " (1N6686 – 1N6687)
Junction to End Tab (1N6686US – 1N6687US)
V_RRM
V_RWM
V_R
Io
I_FSM
Top & Tstg
R_θJL
R_θJE
100
200
20
375
-65 to +175
4
3.5
Notes:
1/ For Ordering Information, Price, Operating Curves, and Availability – Contact Factory.
2/ Screening Based on MIL-PRF-19500. Screening Flows Available on Request.
3/ PIND Testing not Required on Void Free Devices per MIL-PRF-19500.
Axial Leaded
SMS
Units
Volts
Amps
Amps
ºC
ºC/W
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RH0177B
DOC