RH0119J Datasheet, PDF (1/2 Pages) Solid States Devices, Inc – Hyper Fast Recovery Rectifier

Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
Designer’s Data Sheet
Part Number/Ordering Information ^1/
SDR1 __ __ __
│ │ └ Screening ^2/
││
__ = Not Screened
││
TX = TX Level
││
TXV = TXV
││
S = S Level
││
│ └ ^{Package Type}
│
__ = Axial Leaded
│
SMS = Surface Mount Square Tab
│
└
Voltage/Family
DHF = 200V
KHF = 800V
GHF = 400V
MHF = 1000V
JHF = 600V
NHF = 1200V
SDR1DHF & SDR1DHFSMS
thru
SDR1NHF & SDR1NHFSMS
1 AMP, 200 - 1200 VOLTS
35 nsec
Hyper Fast Recovery Rectifier
FEATURES:
 Hyper Fast Recovery: 35 nsec maximum
 Improved V_F over previous version
 PIV up to 1200 Volts
 Hermetically Sealed
 Void Free Single Chip Construction
 For High Efficiency Applications
 Low Reverse Leakage
TX, TXV, and Space Level Screening Available^2/
 Avalanche Breakdown Guaranteed
 Hyper Fast Recovery Replacement for 1N6620-
1N6625
MAXIMUM RATINGS
Symbol Value Units
Peak Repetitive Reverse Voltage and
DC Blocking Voltage
Average Rectified Forward Current
(Resistive Load, 60 Hz, Sine Wave, T_A = 25°C)
Peak Surge Current @ T_A = 25°C
(8.3 ms Pulse, Half Sine Wave or equivalent Square Wave)
Operating and Storage Temperature
Maximum Thermal Resistance
Junction to Lead, L = 0.375” (Axial Lead)
Junction to End Tab (Surface Mount)
SDR1DHF
SDR1GHF
SDR1JHF
SDR1KHF
SDR1MHF
SDR1NHF
V_RRM
V_RWM
V_R
I_O
SDR1DHF - SDR1JHF
SDR1KHF - SDR1NHF
I_FSM
T_OP & T_stg
R_JL
R_JE
Axial Leaded (__)
NOTES:
1/ For ordering information, price, and availability - contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
200
400
600
800
1000
1200
1.0
Volts
Amps
25
7
Amps
-65 to +175 °C
45
28
°C/W
Square Tab
Surface Mount
(SMS)
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RH0119J
DOC