PM0027A_15 Datasheet, PDF (1/3 Pages) Solid States Devices, Inc – HALF BRIDGE

Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
Designer’s Data Sheet
Part Number/Ordering Information ^1/
SPMQ613-01 __
└ Screening ^2/
__ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
SPMQ613-01
600V, 200A FAST SWITCHING IGBT
HALF BRIDGE
FEATURES:
• Hermetic construction, electrically isolated from the
heatsinking baseplate
• Fast switching
• Single IGBT die (no paralleling) with ultrafast
freewheeling diode
• Low switching and conduction losses
• TX, TXV, and Space Level Screening Available
MAXIMUM RATINGS^3/
SYMBOL
Collector – Emitter Breakdown Voltage
Gate – Emitter Voltage
Max. Continuous Collector Current
Pulsed Collector Current
@ T_C = 25ºC
@ T_C = 90ºC
V_CES
V_GES
I_C1
I_C2
I_CM
Clamped Inductive Load Current (T_J = 125ºC)
Reverse Voltage Avalanche Energy (I_C = 100A)
Operating & Storage Temperature
I_LM
E_ARV
T_OP & T_STG
Maximum Thermal Resistance (Junction to Case)
Per switch
Total Device Dissipation @ T_C = 25ºC
Dissipation Derating From @ T_C = 25ºC to T_C = 150ºC
Notes: 1/ For ordering information, price, and availability- Contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Unless otherwise specified, all electrical characteristics @25ºC.
R_0JC
P_D1
P_D2
VALUE
600
±20
200
100
300
100
5.6
-55 to +150
0.50
250
2
UNIT
V
V
A
A
A
mJ
ºC
ºC/W
W
W/ºC
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: PM0027A
DOC