FT0054A Datasheet, PDF (1/2 Pages) Solid States Devices, Inc – Avalanche Rated N-channel HiPower MOSFET

Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information ^1/
SFF 60 N 90 _E_ ___
│
│
│
└ Screening ^2/
│
││
__ = Not Screened
│
││
TX = TX Level
│
││
TXV = TXV Level
│
│
│
│
│
└
S = S Level
Package ^{3/ 4/}
│
│
12 pin package
│
└ ^Voltage
│
90 = 900V
└ ^{Drain Current}
60 = 60A
SFF60N90E
60 AMP , 900 Volts, 0.22 Ω
Avalanche Rated N-channel
HiPower MOSFET
Features:
 Rugged poly-Si gate
 Lowest ON-resistance in the industry
 Avalanche rated
 Hermetically Sealed, Isolated Package
 Low Total Gate Charge
 Fast Switching
 TX, TXV, S-Level screening available
 Improved (R_DS(ON) Q_G) figure of merit
Maximum Ratings^5/
Drain - Source Voltage
Gate – Source Voltage
Max. Continuous Drain Current (package limited)
Max. Instantaneous Drain Current (Tj limited)
Max. Avalanche current
Single and Repetitive Avalanche Energy
Total Power Dissipation
Operating & Storage Temperature
Maximum Thermal Resistance
(Junction to Case)
continuous
transient
@ T_C = 25ºC
@ T_C = 25ºC
@ L= 0.1 mH
@ L= 0.1 mH
@ T_C = 25ºC
Symbol
V_DSS
V_GS
I_D1
I_D2
I_AR
E_AS
E_AR
P_D
T_OP & T_STG
R_θJC
Value
900
+20
+30
60
150
60
4000
64
825
-55 to +150
0.15
Units
V
V
A
A
A
mJ
W
ºC
ºC/W
NOTES:
*Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.
1/ For ordering information, price, and availability – contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ For lead bending options / pinout configurations – contact factory.
4/ Maximum current limited by package configuration
5/ Unless otherwise specified, all electrical characteristics @25^oC.
12 Pin Package
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0054A
DOC