FT0044A_15 Datasheet, PDF (1/2 Pages) Solid States Devices, Inc – Avalanche Rated N-channel MOSFET

Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information ^1/
SFF100N20 ___ ___ ___
│
│
└ Screening ^2/
│
│
__ = Not Screened
│
│
TX = TX Level
│
│
TXV = TXV Level
│
│
S = S Level
│ └ ^{Lead Option}
│
__ = Straight Leads
│
└ Package ^4/
/3T= TO-3 (Pin Diameter : 0.058”-0.063”)
SFF100N20/3T
100 AMP , 200 Volts, 25 mΩ
Avalanche Rated N-channel
MOSFET
Features:
 Rugged poly-Si gate
 Lowest ON-resistance in the industry
 Avalanche rated
 Hermetically Sealed, Power Package with high pin
current carrying capability
 Low Total Gate Charge
 Fast Switching
 TX, TXV, S-Level screening available
 Improved (R_DS(ON) Q_G) figure of merit
Maximum Ratings^5/
Drain - Source Voltage
Gate – Source Voltage
Max. Continuous Drain Current (package
limited)
Max. Instantaneous Drain Current (Tj limited)
Max. Avalanche current
Single and Repetitive Avalanche Energy
Total Power Dissipation
Operating & Storage Temperature
Maximum Thermal Resistance
(Junction to Case)
continuous
transient
@ T_C = 25ºC
@ T_C = 25ºC
@ T_C = 125ºC
@ L= 0.1 mH
@ L= 0.1 mH
@ T_C = 25ºC
Symbol
V_DSS
V_GS
I_D1
I_D2
I_D3
I_AR
E_AS
E_AR
P_D
T_OP & T_STG
R_θJC
Value
200
±20
±30
55
100
40
60
1500
50
300
-55 to +175
0.5 (typ.0.3)
Units
V
V
A
A
A
mJ
W
ºC
ºC/W
NOTES:
TO-3
*Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.
1/ For ordering information, price, and availability - contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
4/ Maximum current limited by package configuration
5/ Unless otherwise specified, all electrical characteristics @25^oC.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0044A
DOC