FT0041B Datasheet, PDF (1/2 Pages) Solid States Devices, Inc – N-CHANNEL MOSFET

Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information ^1/
SFF6661 /39 ___
│ └ Screening ^2/
│
__ = Not Screened
│
TX = TX Level
│
TXV = TXV Level
│
S = S Level
└ ^Package
/39 = TO-39
Maximum Ratings^3/
Drain - Source Voltage
Gate - Source Voltage
Max. Continuous Drain Current
(T_J = 150°C)
Max. Instantaneous Drain Current (Tj limited)
Total Power Dissipation
Operating & Storage Temperature
Maximum Thermal Resistance
(Junction to Ambient)
(Junction to Case)
SFF6661/39
0.86 AMP
N-CHANNEL MOSFET
90 Volts, 4Ω
Features:
 Rugged construction
 Low RDS(on) and high transconductance
 Fast recovery and superior dv/dt performance
 Increased reverse energy capability
 Low input and transfer capacitance for easy
paralleling
 Hermetically sealed package
 Very fast switching speed
 TX, TXV, S-Level screening available^2/
 Replacement for 2N6661
T_C = 25°C
T_C = 100°C
T_C = 25°C
T_A = 25°C
Symbol
V_DS
V_GS
I_D
I_DM
P_D
T_OP & T_STG
R_θJA
R_θJC
Value
90
±20
0.86
0.54
3
6.25
0.725
-65 to +150
170
20
Units
V
V
A
A
W
°C
°C /W
NOTES:
*Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.
1/ For ordering information, price, and availability - contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Unless otherwise specified, all electrical characteristics @25°C.
TO-39
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0041B
DOC