FT0037B_15 Datasheet, PDF (1/2 Pages) Solid States Devices, Inc – Avalanche Rated N-channel MOSFET

Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information ^1/
SFF116N10 ___ ___ ____
││
└ Screening ^2/
││
__ = Not Screened
││
TX = TX Level
││
TXV = TXV Level
│
│
│
└
S = S Level
Lead Option ^3/
│
__ = Straight Leads
│
DB = Down Bend
│
└
UB = Up Bend
Package ^{3/ 4/}
M = TO-254
Z = TO-254Z
SFF116N10M
SFF116N10Z
116 AMP , 100 Volts, 15 mΩ
Avalanche Rated N-channel
MOSFET
Features:
• Rugged poly-Si gate
• Lowest ON-resistance in the industry
• Avalanche rated
• Hermetically Sealed, Isolated Package
• Low Total Gate Charge
• Fast Switching
• TX, TXV, S-Level screening available
• Improved (R_DS(ON) Q_G) figure of merit
Maximum Ratings
Drain - Source Voltage
Gate – Source Voltage
Max. Continuous Drain Current (package
limited)
Max. Instantaneous Drain Current (Tj limited)
Max. Avalanche current
Single and Repetitive Avalanche Energy
Total Power Dissipation
Operating & Storage Temperature
Maximum Thermal Resistance
(Junction to Case)
continuous
transient
Symbol
V_DSS
V_GS
@ T_C = 25ºC
I_D1
@ T_C = 25ºC
@ T_C = 175ºC
@ L= 0.1 mH
@ L= 0.1 mH
@ T_C = 25ºC
I_D2
I_D3
I_AR
E_AS
E_AR
P_D
T_OP & T_STG
R_θJC
Value
100
±20
±30
55
116
80
60
2500
80
150
-55 to +175
1.0
(typ.0.75)
Units
V
V
A
A
A
mJ
W
ºC
ºC /W
NOTES:
*Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.
1/ For ordering information, price, and availability - contact
factory.
2/ Screening based on MIL-PRF-19500. Screening flows
available on request.
3/ For package outlines / lead bending options / pinout
configurations - contact factory.
4/ Maximum current limited by package configuration
5/ Unless otherwise specified, all electrical characteristics
@25^oC.
TO-254
TO-254Z
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0037B
DOC