FT0029B Datasheet, PDF (1/2 Pages) Solid States Devices, Inc – Avalanche Rated N-channel MOSFET

Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
DESIGNER’S DATA SHEET
SMD1, 2
SFF23N60S1
SFF23N60S2
21 AMP, 600 Volts, 320 mΩ
Avalanche Rated N-channel
MOSFET
Note
1/ maximum current limited by package configuration
Features:
• Rugged poly-Si gate
• Lowest ON-resistance in the industry
• Avalanche rated
• Hermetically Sealed, Hot Case power SMD
• Low Total Gate Charge
• Fast Switching
• TX, TXV, S-Level screening available
• Improved (R_DS(ON) Q_G) figure of merit
Maximum Ratings
Drain - Source Voltage
Gate – Source Voltage
Max. Continuous Drain Current (package limited)
Pulsed Drain (Instantaneous) Current (Tj limited)
Max. Avalanche current
Single / Repetitive Avalanche Energy
Total Power Dissipation
Operating & Storage Temperature
Maximum Thermal Resistance
continuous
transient
@ T_C = 25ºC
@ T_C = 125ºC
@ T_C = 25ºC
@ L= 0.1 mH
@ L= 0.1 mH
@ T_C = 25ºC
Junction to Case
Symbol
V_DSS
V_GS
I_D1
I_D2
I_D3
I_AR
E_AS / E_AR
P_D
T_OP & T_STG
R_0JC
Value
600
±30
±40
21
10
30
30
1500 / 30
300
-55 to +150
0.42 (typ 0.3)
Units
V
V
A
A
A
mJ
W
ºC
ºC/W
SMD 1
SMD 2
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0029B
DOC