FT0028_15 Datasheet, PDF (1/2 Pages) Solid States Devices, Inc – Avalanche Rated N-channel MOSFET

Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
DESIGNER’S DATA SHEET
TO-254
TO-254Z
SFF23N60M
SFF23N60Z
15 AMP, 600 Volts, 320 mΩ
Avalanche Rated N-channel
MOSFET
Note 1: maximum current limited by package configuration
Features:
• Advanced low gate charge process
• Lowest ON-resistance in the industry
• Avalanche rated
• Hermetically Sealed, Isolated Package
• Low Total Gate Charge
• Fast Switching
• TX, TXV, S-Level screening available
• Improved (R_DS(ON) Q_G) figure of merit
Maximum Ratings
Drain - Source Voltage
Gate – Source Voltage
Max. Continuous Drain Current (package limited)
Max. Instantaneous Drain Current (Tj limited)
Max. Avalanche current
Single / Repetitive Avalanche Energy
Total Power Dissipation
Operating & Storage Temperature
Maximum Thermal Resistance (Junction to Case)
continuous
transient
@ T_C = 25ºC
@ T_C = 125ºC
@ T_C = 25ºC
@ L= 0.1 mH
@ L= 0.1 mH
@ T_C = 25ºC
Symbol
V_DSS
V_GS
I_D1
I_D2
I_D3
I_AR
E_AS / E_AR
P_D
T_OP & T_STG
Rjc
Value
600
±30
±40
15
7
23
23
1500 / 30
150
-55 to +150
0.83 (typ.0.6)
Units
V
V
A
A
A
mJ
W
ºC
ºC /W
TO254
(M)
TO254Z
(Z)
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0028A
DOC