FT0018 Datasheet, PDF (1/2 Pages) Solid States Devices, Inc – N-Channel Trench Gate MOSFET

Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
DESIGNER’S DATA SHEET
TO-254 and TO-254Z
SFF35N20M
SFF35N20Z
55 AMP (note 1) /200 Volts
35 mO
N-Channel Trench Gate
MOSFET
note 1: Drain Current is package limited
Features:
• TRENCH GATE technology
• Lowest ON-resistance in the industry
• UIS rated
• Hermetically Sealed, Isolated Power Package
• Low Total Gate Charge
• Fast Switching
• TX, TXV, S-Level screening available
• Improved (R_DS(ON) Q_G) figure of merit
• Enhanced replacement for IRHM250 types
Maximum Ratings
Drain - Source Voltage
Gate – Source Voltage
Max. Continuous Drain Current
(junction temperature limited)
Max. Continuous Drain Current (package limited)
Max. Avalanche current
Repetitive Avalanche Energy
Total Power Dissipation
Operating & Storage Temperature
Maximum Thermal Resistance
(Junction to Case)
@ T_C = 25ºC
@ T_C = 125ºC
@ T_C = 25ºC
@ L= 0.1 mH
@ L= 0.1 mH
@ T_C = 25ºC
Symbol
V_DSS
V_GS
I_D1
I_D2
I_D3
I_AR
E_AR
P_D
T_OP & T_STG
R_0JC
TO-254Z(Z)
TO-254 (M)
Value
200
±20
85
12
55
35
60
210
-55 to +175
0.7
(typ 0.55)
Units
V
V
A
A
A
mJ
W
ºC
ºC/W
PIN 3
PIN 2
PIN 1
PIN 3
PIN 2
PIN 1
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0018A
DOC