FT0015_15 Datasheet, PDF (1/2 Pages) Solid States Devices, Inc – N-Channel MOSFET Transistor

Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, CA 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
DESIGNER’S DATA SHEET
SFF110S.22
3.5 A /100 Volts / 0.6 Ω
N-Channel MOSFET Transistor
SMD.22
Features:
• Rugged Construction with Polysilcon Gate
• Small Footprint Hermetic Surface Mount Device with
Excellent Thermal Properties
• Replacement/Enhancement for 2N6782
• TX, TXV, S-Level Screening Available
• Very Fast Switching Characteristics
Maximum Ratings
Symbol
Value
Drain – Source Voltage
V_DS
100
Drain – Gate Voltage
V_DG
100
Gate – Source Voltage
Continuous Drain Current
Power Dissipation @ T_C = 25ºC
Power Dissipation @ T_A = 25ºC
Operating & Storage Temperature
@ T_C = 25ºC
@ T_C = 100ºC
Note 1
Note 2
V_GS
I_D1
I_D2
P_D
Top & Tstg
+/-20
3.5
2.25
16.5
0.8
-55 to +150
Maximum Thermal Resistance
Junction to Case and to Ambient
R_θJC
R_θJA
7.5 (typ 5)
156.5
Note1: Derated 60.6 mW/°C above T_C= 25°C
Note2: Derated 6.4 mW/°C above T_A= 25°C
PIN 1= COLLECTOR; PIN 2= EMITTER; PIN 3= BASE
.220±.007
.065±.010
Units
Volts
Volts
Volts
Amps
W
ºC
ºC/W
3
.134 .030
.052
2
1
.140
.150
±.007
.070
.090
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
.005 TYP
DATA SHEET #: FT0015A
DOC