FT0013C_15 Datasheet, PDF (1/2 Pages) Solid States Devices, Inc – Avalanche Rated P-MOSFET

Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information ^1/
SFR9130 __ __ __
│ │ └ Screening ^2/
││
__ = Not Screened
││
TX = TX Level
││
││
TXV = TXV Level
S = S Level
│ └ _{Lead Options}
│
__ = Straight Leads
│
DB = Down Bend
│
UB = Up Bend
└ _Package 3/
J = TO-257
Maximum Ratings
Drain – Source Voltage
Gate – Source Voltage, continuous
Gate – Source Voltage, transient
Max. Continuous Drain Current
(package limited)
Max. Avalanche Current
Max. Continuous Drain Current (Tj limited)
Single Pulse Avalanche Energy
Total Power Dissipation
Operating & Storage Temperature
Maximum Thermal Resistance
(Junction to Case)
SFR9130J
RADIATION TOLERANT
20 AMP, 100 Volts, 90 mΩ
Avalanche Rated P-MOSFET
Features:
 Rugged Trench Technology
 Low ON-resistance: 60mΩ typ
 Radiation tolerant: less than 0.5V typical gate
threshold shift @ TID= 100kRAD
 SEU and SEGR resistant to LET 38
 Avalanche rated
 Hermetically Sealed Power Packaging
 Low Total Gate Charge, Fast Switching
 Replacement for IRF9130 types
 TX, TXV, S-Level screening available
@ T_C = 25ºC
@ T_C = 100ºC
@ L= 5.0mH
@ Tj= 150ºC
@ L= 5.0mH
@ T_C = 25ºC
Symbol
V_DSS
V_GS
I_D1
I_D2
I_AR
I_DM
E_AS
P_D
T_OP & T_STG
R_0JC
Value
-100
±15
±25
20
15
26
26
300
75
-55 to +150
1.65
Units
V
V
A
A
A
mJ
W
ºC
ºC/W
NOTES:
*Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.
1/ For ordering information, price, and availability - contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Unless otherwise specified, all electrical characteristics @25^oC.
TO-257 (J)
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0013C
DOC