FT0012_15 Datasheet, PDF (1/2 Pages) Solid States Devices, Inc – P-Channel MOSFET

Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
DESIGNER’S DATA SHEET
TO-257
SFF20P10J
20 AMP /100 Volts
200 mΩ
P-Channel MOSFET
Maximum Ratings
Drain - Source Voltage
Gate – Source Voltage
Max. Continuous Drain Current (package limited)
Max. Avalanche current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Total Power Dissipation
Operating & Storage Temperature
Maximum Thermal Resistance
(Junction to Case)
PACKAGE OUTLINE:
TO-257 (J)
PINOUT:
PIN 1: DRAIN
PIN 2: SOURCE
PIN 3: GATE
Features:
• Rugged construction with polysilicon gate
• Low ON-resistance and high
transconductance
• Excellent high temperature stability
• Hermetically Sealed, Isolated Package
• Low Total Gate Charge
• Fast Switching
• replacement for IRF9140 types
• TX, TXV, S-Level screening available
@ T_C = 25ºC
@ T_C = 100ºC
@ L= 0.1 mH
@ L= 0.1 mH
@ L= 0.1 mH
@ T_C = 25ºC
Symbol
V_DSS
V_GS
I_D1
I_D2
I_AR
E_AR
E_AS
P_D
T_OP & T_STG
R_0JC
Value
-100
±20
20
11
20
12.5
500
100
-55 to +150
1.25
Units
V
V
A
A
mJ
mJ
W
ºC
ºC/W
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
SUFFIX JDB
SUFFIX JUB
DATA SHEET #: FT0012A
DOC