FT0010B Datasheet, PDF (1/2 Pages) Solid States Devices, Inc – Dual N-Channel JFET Transistor

Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information ^1/
SFF4393A2 __ __
││
││
│ └ Screening ^2/ __ = Not Screened
│
TX = TX Level
│
TXV = TXV Level
│
S = S Level
└ Package ^3/ GW = GULLWING
SFF4393A2GW
Dual Microminiature Package
50 mA 40 Volts
Dual N-Channel JFET Transistor
Features:
• Low ON Resistance
• Low Capacitance, < 4 pF
• Fast Switching, t_on < 5 ns
• Used for Analog Switches, Choppers, Current
Limiters, and Sample-and-Hold Applications
• TX, TXV, and S-Level Screening Available.
Consult Factory.
Maximum Ratings
Symbol
Drain – Source Voltage
Drain – Gate Voltage
Reverse Gate – Source Voltage
Drain Current
Power Dissipation @ T_A= 25^oC
Maximum Thermal Resistance
Per Device
Total
Junction to Ambient
Lead Temperature
(1/16” from the seated surface for 60 seconds)
Operating & Storage Temperature
V_DS
V_DG
V_SG
I_D
P_D
R_ΘJA ^5/
T_L
T_{OP &} T_STG
PACKAGE OUTLINE: GULLWING (GW)
6x .030
2 x .05 0
(=.1 00)
.015
6x .010
3x .015
Value
40
40
40
50
500
660
245
300
-65 to +200
. 015±.010
5x R.018
.107
.125
.193
.034
.025
.040
±.010
.107
.010
.130
.035
6x R.0 10
.350
±.01 0
.033
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0010B
Units
Volts
Volts
Volts
mA
mW
mW
ºC/W
ºC
ºC
DOC