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FT0009B_15 Datasheet, PDF (1/3 Pages) Solid States Devices, Inc – P-Channel MOSFET | |||
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Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNERâS DATA SHEET
Part Number/Ordering Information 1/
SFF25P20 ___ ___
â â Screening 2/
â
__ = Not Screened
â
TX = TX Level
â
TXV = TXV
â
â
S = S Level
Package 2/
S2I = SMD2 Isolated
M = TO-254
Maximum Ratings
Drain - Source Voltage
Gate â Source Voltage
Max. Continuous Drain Current
Max. Instantaneous Drain Current (Tj limited)
Max. Avalanche current
Repetitive Avalanche Energy
Total Power Dissipation
Operating & Storage Temperature
Maximum Thermal Resistance
SFF25P20 Series
25 AMP / 200 Volts
150 m⦠typical
P-Channel MOSFET
Features:
⢠polySi gate cell structure
⢠Low ON-resistance
⢠UIS (unclamped inductive switching) rated
⢠Hermetically Sealed, Isolated Package
⢠Low package inductance
⢠Stress relief provided by flexible leads â
several options available
⢠Improved (RDS(ON) QG) figure of merit
⢠TX, TXV, S-Level screening available
Continuous
transient
@ TC = 25ºC
@ TC = 25ºC
@ TC = 25ºC
Junction to Case
Symbol
VDSS
VGS
ID1
ID3
IAR
EAR
PD
TOP & TSTG
R0JC
Value
-200
±20
±30
25
95
25
30
250
-55 to +150
0.83
0.6 typical
Units
V
V
A
A
A
mJ
W
ºC
ºC/W
NOTES:
1/ For ordering information, price, operating curves, and
availability- Contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows
available on request.
3/ Unless otherwise specified, all electrical characteristics
@25ºC.
SMD 2 Isolated
TO-254
NOTE: SEE DASH# DEFINITION TABLE
FOR AVAILABLE LEAD FORMING
CONFIGURATION
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0009B
DOC
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