FT0009B Datasheet, PDF (1/3 Pages) Solid States Devices, Inc – P-Channel MOSFET

Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number/Ordering Information ^1/
SFF25P20 ___ ___
│ └ Screening ^2/
│
__ = Not Screened
│
TX = TX Level
│
TXV = TXV
│
└
S = S Level
Package ^2/
S2I = SMD2 Isolated
M = TO-254
Maximum Ratings
Drain - Source Voltage
Gate – Source Voltage
Max. Continuous Drain Current
Max. Instantaneous Drain Current (Tj limited)
Max. Avalanche current
Repetitive Avalanche Energy
Total Power Dissipation
Operating & Storage Temperature
Maximum Thermal Resistance
SFF25P20 Series
25 AMP / 200 Volts
150 mΩ typical
P-Channel MOSFET
Features:
• polySi gate cell structure
• Low ON-resistance
• UIS (unclamped inductive switching) rated
• Hermetically Sealed, Isolated Package
• Low package inductance
• Stress relief provided by flexible leads –
several options available
• Improved (R_DS(ON) Q_G) figure of merit
• TX, TXV, S-Level screening available
Continuous
transient
@ T_C = 25ºC
@ T_C = 25ºC
@ T_C = 25ºC
Junction to Case
Symbol
V_DSS
V_GS
I_D1
I_D3
I_AR
E_AR
P_D
T_OP & T_STG
R_0JC
Value
-200
±20
±30
25
95
25
30
250
-55 to +150
0.83
0.6 typical
Units
V
V
A
A
A
mJ
W
ºC
ºC/W
NOTES:
1/ For ordering information, price, operating curves, and
availability- Contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows
available on request.
3/ Unless otherwise specified, all electrical characteristics
@25ºC.
SMD 2 Isolated
TO-254
NOTE: SEE DASH# DEFINITION TABLE
FOR AVAILABLE LEAD FORMING
CONFIGURATION
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0009B
DOC