FT0007_15 Datasheet, PDF (1/2 Pages) Solid States Devices, Inc – N-Channel Power MOSFET

Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
DESIGNER’S DATA SHEET
Features:
• Rugged Construction
• Low RDS(on) and high transconductance
• Excellent High Temperature Stability
• Very Fast Switching Speed
• Fast Recovery and Superior dv/dt performance
• Increased Reverse Energy Capability
• Low Input and Transfer Capacitance for Easy Paralleling
• Hermetically Sealed Package
• TX, TXV and Space Level Screening Available
SFL3200/39
Logic Level
12A 150V .17Ω
N-Channel Power MOSFET
TO-39
Maximum Ratings
Drain to Source Voltage
Gate to Source Voltage
Continuous Drain Current
Peak Drain Current TC = 25 °C ^1/
Operating and Storage Temperature
Thermal Resistance Junction to Case
Total Device Dissipation @ TC = 25 °C
Total Device Dissipation @ TA = 25 °C
Package Outline: TO-39 (JEDEC)
PIN OUT:
PIN 1: Source
PIN 2: Gate
Pin 3: Drain
Symbol
V_DS
V_GS
I_D
I_P
Top & Tstg
R_θJC
P_D
Value
150
+16
9.3
35
-55 to 175
11.5
13
1.2
Unit
Volts
Volts
Amps
Amps
ºC
ºC/W
Watts
Note:
1/
Peak Drain Current Limited by Package Lead Wire
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0007A