FT0004 Datasheet, PDF (1/2 Pages) Solid States Devices, Inc – POWER MOSFET

PRELIMINARY
SOLID STATE DEVICES, INC.
14830 Valley View Av. * La Mirada, Ca 90670
Phone: [phone] * Fax: [phone]
DESIGNER'S DATA SHEET
FEATURES:
• Rugged construction with polysilicon gate
• Low RDS (on) and high transconductance
• Excellent high temperature stability
• Very fast switching speed
• Fast recovery and superior dv/dt performance
• Increased reverse energy capability
• Low input and transfer capacitance for easy paralleling
• Hermetically sealed package
• TX, TXV, and Space Level screening available
• Replaces: SMM40N20 Type
MAXIMUM RATINGS
CHARACTERISTIC
Drain to Source Voltage
Gate to Source Voltage
Continuous Drain Current
Operating and Storage Temperature
Thermal Resistance, Junction to Case
Total Device Dissipation
@ TC = 25^oC
@ TC = 55^oC
PACKAGE OUTLINE: TO-3
PIN OUT:
DRAIN: PIN 1
SOURCE: PIN 2
GATE:
PIN 3
SFF1310M
SFF1310Z
40 AMPS
200 VOLTS
0.050 S
N-CHANNEL
POWER MOSFET
TO-3
SYMBOL
V_DS
V_GS
I_D
T_op & T_stg
R_2JC
P_D
VALUE
200
±20
40
-55 to +150
0.5
250
190
UNIT
Volts
Volts
Amps
o_C
o_C/W
Watts
NOTE: All specifications are subject to change without notification.
SCDs for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0004A