FT0001_15 Datasheet, PDF (1/2 Pages) Solid States Devices, Inc – POWER MOSFET

PRELIMINARY
SOLID STATE DEVICES, INC.
14005 Stage Road * Santa Fe Springs, Ca 90670
Phone: [phone] * Fax: [phone]
DESIGNER'S DATA SHEET
FEATURES:
• Rugged construction with poly silicon gate
• Low RDS (on) and high transconductance
• Excellent high temperature stability
• Very fast switching speed
• Fast recovery and superior dv/dt performance
• Increased reverse energy capability
• Low input transfer capacitance for easy paralleling
• Hermetically sealed surface mount package
• TX, TXV and Space Level screening available
MAXIMUM RATINGS
CHARACTERISTIC
Drain to Source Voltage
Drain to Gate Voltage (RGS = 1.0 mS)
Gate to Source Voltage
Continuous Drain Current @ TC = 25^oC
Operating and Storage Temperature
Thermal Resistance, Junction to Case (All Four)
Total Device Dissipation @ TC = 25^oC
PACKAGE OUTLINE: 28 PIN CLCC
PIN OUT:
SOURCE: 1, 15 - 28
DRAIN: 5 - 11
GATE: 2, 3, 13, 14
NOTE:
All drain/source pins must be connected
on the PC board in order to maximize
current carrying capability and to mini-
mize RDS (on)
SFF75N06-28
30 AMP ^1/
60 VOLTS
25mS
N-CHANNEL
POWER MOSFET
28 PIN CLCC
SYMBOL
V_DS
V_DG
V_GS
I_D
T_op & T_stg
R_2JC
P_D
VALUE
100
60
±20
30
-55 to +150
3.5
35
UNIT
Volts
Volts
Volts
Amps
o_C
o_C/W
Watts
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0001A