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FP0025E Datasheet, PDF (1/3 Pages) Solid States Devices, Inc – P-Channel POWER MOSFET | |||
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Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4470 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNERâS DATA SHEET
Part Number / Ordering Information 1/
SFF9130 __ __ __
â â â Screening2/
ââ
__ = Not Screened
ââ
TX = TX Level
ââ
TXV = TXV Level
ââ
S = S Level
â â Lead Option
â
__ = Straight Leads
â
â
â
DB = Down Bend
UB = Up Bend
Package
M = TO-254
Z = TO-254Z
Maximum Ratings3/
Drain â Source Voltage
Gate â Source Voltage
Continuous Drain Current
Operating & Storage Temperature
Thermal Resistance, Junction to Case
Total Device Power Dissipation
Single Pulse Avalanche Energy
Repetitive Avalanche Energy
SFF9130M
SFF9130Z
-11 AMP
P-Channel POWER MOSFET
100 Volts
0.30 ⦠typical
Features:
ï· Rugged Construction with Poly Silicon Gate
ï· Low RDS(on) and High Transconductance
ï· Excellent High Temperature Stability
ï· Very Fast Switching Speed
ï· Fast Recovery and Superior dv/dt Performance
ï· Increased Reverse Energy Capability
ï· Low Input and Transfer Capacitance for Easy
Paralleling
ï· Hermetically Sealed
ï· TX, TXV, and Space Level Screening Available
ï· Replaces IRF9130 Types
TC = 25ºC
TC = 100ºC
TC = 25ºC
TC = -55ºC
Symbol
VDS
VGS
ID
TOP & TSTG
Rï±JC
PD
EAS
Value
-100
+20
-11
-7
-55 to +150
2
63
48
81
Units
V
V
A
ºC
ºC/W
Watts
mJ
EAR
7.5
mJ
NOTES:
*Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.
1/ For ordering information, price, and availability - contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Unless otherwise specified, all electrical characteristics @25oC.
TO-254 (M)
TO-254Z (Z)
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FP0025E
DOC
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