F00247 Datasheet, PDF (1/2 Pages) Solid States Devices, Inc – POWER MOSFET

SOLID STATE DEVICES, INC.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: [phone] * Fax: [phone]
DESIGNER'S DATA SHEET
FEATURES:
• Rugged construction with poly silicon gate
• Ultra low RDS (on) and high transconductance
• Excellent high temperature stability
• Very fast switching speed
• Fast recovery and superior dv/dt performance
• Increased reverse energy capability
• Low input and transfer capacitance for easy paralleling
• Hermetically sealed package
• TX, TXV and Space Level screening available
• Replaces: SMM70N10 Types
SFF70N10M
SFF70N10Z
70 AMP
600 VOLT
0.030Ω
N-CHANNEL
POWER MOSFET
TO-254 (M)
TO-254Z (Z)
MAXIMUM RATINGS
CHARACTERISTIC
Drain to Source Voltage
Gate to Source Voltage
Continuous Drain Current
Operating and Storage Temperature
Thermal Resistance, Junction to Case
Total Device Dissipation
CASE OUTLINE: TO-254 (Sufix M)
Pin Out:
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
SYMBOL
V_DS
V_GS
I_D
VALUE
100
+ 20
56^1/
T_op & T_stg
-55 to +150
R_0JC
.83
@ TC = 25^oC
@ TC = 55^oC
P_D
150
114
CASE OUTLINE: TO-254Z (Sufix Z)
Pin Out:
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
UNIT
Volts
Volts
Amps
o_C
o_C/W
Watts
Available with Glass or Ceramic Seals. Contact Facory for details.
NOTE: All specifications are subject to change without notification.
SCDs for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00247B