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F00201D Datasheet, PDF (1/2 Pages) Solid States Devices, Inc – N-Channel POWER MOSFET
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
SFF20N60 __ __ __
│ │ └ Screening 2/ __ = Not Screen
││
TX = TX Level
││
TXV = TXV Level
││
││
S = S Level
│ └ Lead Option 3/ __ = Straight Leads
│
DB = Down Bend
│
UB = Up Bend
└ Package 3/ M = TO-254
Z = TO-254Z
TO-254 (M)
TO-254Z (Z)
SFF20N60M
SFF20N60Z
20 AMP / 600 Volts
Typ 0.30 Ω
N-Channel POWER MOSFET
Features:
 Rugged Construction with Polysilicon Gate
 Low RDS(ON) and High Transconductance
 Excellent High Temperature Stability
 Very Fast Switching Speed
 Fast Recovery and Superior dV/dt performance
 Increased Reverse Energy Capability
 Low Input and Transfer Capacitance for Easy Paralleling
 Hermetically Sealed, Isolated Surface Mount Power Package
 Ceramic Seals for Improved Hermeticity
 TX, TXV, S-Level screening available
 Replacement for IXTH20N60 Types
Maximum Ratings
Drain – Source Voltage
Gate – Source Voltage
Continues Drain Current
Avalanche Energy, repetitive
Avalanche energy, single pulse
Power Dissipation
Operating & Storage Temperature
Maximum Thermal Resistance
Junction to Case
Case Outline: TO-254 (M)
TC = 25ºC
TC = 55ºC
Symbol
VDS
VGS
ID
EAR
EAS
PD
Top & Tstg
RθJC
Case Outline: TO-254Z (Z)
Value
600
±30
20
0.03
1.0
150
114
-55 to +175
0.83
Units
Volts
Volts
Amps
J
W
ºC
ºC/W
Optional Lead Bend Configuration
MDB & ZDB
MUB & ZUB
Suffixes
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00201D
DOC