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F00201D Datasheet, PDF (1/2 Pages) Solid States Devices, Inc – N-Channel POWER MOSFET | |||
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Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNERâS DATA SHEET
Part Number / Ordering Information 1/
SFF20N60 __ __ __
â â â Screening 2/ __ = Not Screen
ââ
TX = TX Level
ââ
TXV = TXV Level
ââ
ââ
S = S Level
â â Lead Option 3/ __ = Straight Leads
â
DB = Down Bend
â
UB = Up Bend
â Package 3/ M = TO-254
Z = TO-254Z
TO-254 (M)
TO-254Z (Z)
SFF20N60M
SFF20N60Z
20 AMP / 600 Volts
Typ 0.30 â¦
N-Channel POWER MOSFET
Features:
ï· Rugged Construction with Polysilicon Gate
ï· Low RDS(ON) and High Transconductance
ï· Excellent High Temperature Stability
ï· Very Fast Switching Speed
ï· Fast Recovery and Superior dV/dt performance
ï· Increased Reverse Energy Capability
ï· Low Input and Transfer Capacitance for Easy Paralleling
ï· Hermetically Sealed, Isolated Surface Mount Power Package
ï· Ceramic Seals for Improved Hermeticity
ï· TX, TXV, S-Level screening available
ï· Replacement for IXTH20N60 Types
Maximum Ratings
Drain â Source Voltage
Gate â Source Voltage
Continues Drain Current
Avalanche Energy, repetitive
Avalanche energy, single pulse
Power Dissipation
Operating & Storage Temperature
Maximum Thermal Resistance
Junction to Case
Case Outline: TO-254 (M)
TC = 25ºC
TC = 55ºC
Symbol
VDS
VGS
ID
EAR
EAS
PD
Top & Tstg
RθJC
Case Outline: TO-254Z (Z)
Value
600
±30
20
0.03
1.0
150
114
-55 to +175
0.83
Units
Volts
Volts
Amps
J
W
ºC
ºC/W
Optional Lead Bend Configuration
MDB & ZDB
MUB & ZUB
Suffixes
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00201D
DOC
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