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F00087B_15 Datasheet, PDF (1/3 Pages) Solid States Devices, Inc – N-Channel POWER MOSFET | |||
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Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNERâS DATA SHEET
Part Number / Ordering Information1/
SFF440
___
â
â
â
â
â
â
____
â Screening2/
__ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
Package3/
J = TO-257
Maximum Ratings
Drain - Source Voltage
Gate - Source Voltage
Max. Continuous Drain Current (package
limited) @ 25ºC
Operating & Storage Temperature
Maximum Thermal Resistance
(Junction to Case)
Total Power Dissipation
SFF440J
8 AMP
N-Channel
Power MOSFET
500 Volts
0.86 â¦
Features:
ï· Rugged construction with polysilicon gate
ï· Low RDS(on) and high transconductance
ï· Excellent high temperature stability
ï· Very fast switching speed
ï· Fast recovery and superior dv/dt performance
ï· Increased reverse energy capability
ï· Low input and transfer capacitance for easy
paralleling
ï· Hermetically sealed package
ï· Low inductance leads
ï· TX, TXV, S-Level screening available
ï· Replaces: IRF440 types
Symbol
VDS
VGS
Value
500
±20
Units
V
V
ID
6.9
A
TOP & TSTG -55 to +150
ºC
@ TC = 25ºC
@ TC = 55ºC
RθJC
PD
2
ºC/W
63
48
W
NOTES:
*Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.
1/ For ordering information, price, and availability - contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Maximum current limited by package configuration
4/ Unless otherwise specified, all electrical characteristics @25oC.
TO-257
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00087B
DOC
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