F00029 Datasheet, PDF (1/2 Pages) Solid States Devices, Inc – POWER MOSFET

Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information ^1/
SFF140 _J_ __ __
¦ ¦ + Screening ^2/ __ = Not Screen
¦¦
TX = TX Level
¦¦
TXV = TXV Level
¦¦
¦¦
S = S Level
¦ + Lead Option ^3/ __ = Cooper Core Alloy Leads
¦
BW = Welded Copper Leads
¦
¦
+ Package: TO-257
SFF140J
SFF140JBW
28 AMP / 100 Volts
0.077 Ω
N-Channel
POWER MOSFET
Features:
• Rugged Construction with Polysilicon Gate Cell
• Low RDS(ON) and High Transconductance
• Excellent High Temperature Stability
• Very Fast Switching Speed
• Fast Recovery and Superior dV/dt Performance
• Increased Reverse Energy Capability
• Low Input and Transfer Capacitance for Easy Paralleling
• Ceramic Seals for Improved Hermeticity
• Hermetically Sealed Surface Mount Power Package
• TX, TXV, Space Level Screening Available
• Replacement for IRF140/540 Types
• Available with enhanced flexibility Cu pins: SFF140JBW
Maximum Ratings
Drain – Source Voltage
Gate – Source Voltage
Continuous Collector Current
Power Dissipation
Operating & Storage Temperature
Maximum Thermal Resistance
Junction to Case
Symbol
T_C = 25ºC
T_C = 55ºC
V_DS
V_GS
I_D
P_D
Top & Tstg
R_θJC
Value
100
±20
28
62.5
47.5
-55 to +150
2
Units
Volts
Volts
Amps
W
ºC
ºC/W
TO-257
Pin Out:
PIN 3
PIN 2
Pin1: Drain
PIN 1
Pin2: Source
Pin3: Gate
SUFFIX: J
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
SUFFIX: JD
SUFFIX: JU
DATA SHEET #: F00029C
DOC