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F00019D Datasheet, PDF (1/2 Pages) Solid States Devices, Inc – N-Channel Power MOSFET
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
SFF130 __ __
│ └ Screening 2/
│ __ = Not Screen
│
│
│
│
│ Package
TX = TX Level
TXV = TXV Level
S = S Level
└ /5= TO-5
TO-5
SFF130/5
8 AMP / 100 Volts
0.18 Ω
N-Channel Power MOSFET
Features:
• Rugged Construction with Poly Silicon Gate
• Low RDS(ON) and High Transconductance
• Excellent High Temperature Stability
• Very Fast Switching Speed
• Fast Recovery and Superior dV/dt Performance
• Increased Reverse Energy Capability
• Low Input and Transfer Capacitance for Easy Paralleling
• Hermetically Sealed Package
• Available in both hot case and isolated versions
• Ideal for low power applications
• TX, TXV, Space Level Screening Available 2/
• Replacement for IRFF130 Types
Maximum Ratings 3/
Drain – Source Voltage
Gate – Source Voltage
Continuous Collector Current
Power Dissipation
Operating & Storage Temperature
Thermal Resistance
Junction to Case
Single Pulse Avalanche Energy
NOTES:
1/ For Ordering Information, Price, Operating
Curves, and Availability- Contact Factory.
2/ Screened to MIL-PRF-19500.
3/ Unless Otherwise Specified, All Maximum
Ratings and Electrical Characteristics @25ºC.
TC = 25ºC
TC = 100ºC
TC = 25ºC
TA = 25ºC
Symbol
VDS
VGS
ID
PD
Top & Tstg
RθJC
EAS
TO-5 Case Outline:
Value
100
±20
8
5
25
19
-55 to +150
5
75
Units
Volts
Volts
Amps
Watts
ºC
ºC/W
mJ
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00019D
DOC