SSM9435GH Datasheet, PDF (3/5 Pages) Silicon Standard Corp. – P-channel Enhancement-mode Power MOSFET

80
T _C =25 ^o C
60
-10V
-8.0V
-6.0V
40
-4.5V
20
V _G =-4.0V
0
0
2
4
6
8
10
-V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
SSM9435GH,J
70
T _C =150 ^o C
60
50
-10V
-8.0V
40
-6.0V
30
-4.5V
20
V _G =-4.0V
10
0
0
2
4
6
8
-V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
90
I _D =-10A
80
T _c =25°C
70
60
50
40
30
2
4
6
8
10
12
-V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance vs. Gate Voltage
10
1.6
I _D =-10A
1.4
V _G =-10V
1.2
1.0
0.8
0.6
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
vs. Junction Temperature
3
8
2
6
T _j =150 ^o C
4
T _j =25 ^o C
1
2
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V _SD , Source-to-Drain Voltage (V)
Fig5. Forward Characteristic of
Reverse Diode
0
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage vs.
Junction Temperature
2/16/2005 Rev.2.1
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