SSM6679GM Datasheet, PDF (3/5 Pages) Silicon Standard Corp. – P-CHANNEL ENHANCEMENT MODE POWER MOSFET

280
T _A = 25 ^o C
240
-10V
-7.0V
200
-5.0V
160
-4.5V
120
80
V _G = -3.0 V
40
0
0
1
2
3
4
5
-V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
150
T _A = 150 ^o C
100
SSM6679GM
-10V
-7.0V
-5.0V
-4.5V
50
V _G = -3.0 V
0
0
1
2
3
4
5
6
-V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
14
1.8
I _D = -11 A
T _A =25 ℃
I _D = -14 A
1.6
V _G =-10V
12
1.4
10
1.2
1.0
8
0.8
6
3
5
7
9
11
-V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
14
0.6
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
3
12
10
2
8
T _j =150 ^o C
6
T _j =25 ^o C
1
4
2
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
0
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
08/10/2007 Rev.1.00
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