 English |
|
|
|
|
|
|
|
| SSM9962M Datasheet, PDF (2/5 Pages) Silicon Standard Corp. – DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS | |||
| |||
| ◁ |
SSM9962M/GM
Electrical Characteristics @ Tj=25oC (unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
âBV â DSS/ Tj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=7A
VGS=4.5V, ID=5A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
VDS=VGS, ID=250uA
VDS=10V, ID=7A
VDS=40V, VGS=0V
VDS=32V ,VGS=0V
VGS= ± 20V
ID=7A
VDS=32V
VGS=4.5V
VDS=20V
ID=1A
RG=5.7⦠,VGS=10V
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RD=20â¦
VGS=0V
VDS=25V
f=1.0MHz
40 -
-
V
-
0.1 - V/°C
-
- 25 mâ¦
-
- 40 mâ¦
1
-
3
V
- 11 -
S
-
-
1 uA
-
- 25 uA
-
- ±100 nA
- 25.8 - nC
- 4.4 - nC
- 9.1 - nC
- 10.6 - ns
- 6.8 - ns
- 26.3 - ns
- 12
-
ns
- 1165 - pF
- 205 - pF
- 142 - pF
Source-Drain Diode
Symbol
VSD
trr
Parameter
Forward On Voltage2
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
IS=1.7A, VGS=0V
Is=1.7A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
-
- 1.2 V
- 21.2 - ns
- 16 - nC
Notes:
1.Pulse width limited by max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135°C/W when mounted on min. copper pad.
8/21/2004 Rev.2.01
www.SiliconStandard.com
2 of 5
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese