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| SSM9930M Datasheet, PDF (2/8 Pages) List of Unclassifed Manufacturers – DUAL N-AND DUAL P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS | |||
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SSM9930M
N-channel Electrical Characteristics @ Tj=25oC (unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
â BVDSS/ â Tj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=5A
VGS=4.5V, ID=3A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
VDS=10V, ID=5A
VDS=30V, VGS=0V
VDS=24V, VGS=0V
VGS=±25V
ID=5A
VDS=15V
VGS=4.5V
VDS=15V
ID=1A
RG=6⦠,VGS =10V
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RD=15â¦
VGS=0V
VDS=25V
f=1.0MHz
30 -
-
V
- 0.037 - V/°C
-
- 33 mâ¦
-
- 60 mâ¦
1
-
3V
- 5.2 -
S
-
-
1 uA
-
- 25 uA
-
- ±100 nA
- 7.1 - nC
- 2.3 - nC
- 3.8 - nC
- 7.2 - ns
- 10.4 - ns
- 18 - ns
- 7.8 - ns
- 600 - pF
- 230 - pF
- 94 - pF
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
IS=1.7A, VGS=0V
IS=1.7A, VGS=0V
dI/dt=100A/µs
Min. Typ. Max. Units
-
- 1.2 V
- 21.4 - ns
- 16 - nC
10/21/2004 Rev.1.01
www.SiliconStandard.com
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