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| SSM4424GM Datasheet, PDF (2/5 Pages) Silicon Standard Corp. – N-channel Enhancement-mode Power MOSFET | |||
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SSM4424GM
Electrical Characteristics @ Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
â BV DSS/â Tj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=13A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
VGS=4.5V, ID=10A
VDS=VGS, ID=250uA
VDS=10V, ID=13A
VDS=30V, VGS=0V
VDS=24V, VGS=0V
VGS=±20V
ID=13A
VDS=24V
VGS=4.5V
VDS=15V
ID=1A
RG=3.3â¦,VGS=10V
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RD=15â¦
VGS=0V
VDS=25V
f=1.0MHz
Gate Resistance
f=1.0MHz
30 -
-
V
- 0.02 - V/°C
-
-
9 mâ¦
-
- 14 mâ¦
1
-
3V
- 21 -
S
-
-
1 uA
-
- 25 uA
-
- ±100 nA
- 23 35 nC
-
6
- nC
- 15 - nC
- 13 - ns
-
9
- ns
- 35 - ns
- 17 - ns
- 1920 3070 pF
- 410 - pF
- 300 - pF
- 0.9 - â¦
Source-Drain Diode
Symbol
VSD
trr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Qrr
Reverse Recovery Charge
Test Conditions
IS=2.1A, VGS=0V
IS=13A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
-
- 1.2 V
- 33 - ns
- 26 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 125°C/W when mounted on min. copper pad.
5/25/2005 Rev.2.10
www.SiliconStandard.com
2 of 5
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