SSM04N70BGF-H Datasheet, PDF (2/5 Pages) Silicon Standard Corp. – N-channel Enhancement-mode Power MOSFET

SSM04N70BGF-H
ELECTRICAL CHARACTERISTICS (at Tj = 25°C, unless otherwise specified)
Symbol
BV_DSS
∆ BV _DSS/∆ Tj
R_DS(ON)
Parameter
Drain-source breakdown voltage
Breakdown voltage temperature coefficient
Static drain-source on-resistance
Test Conditions
V_GS=0V, I_D= 1mA
Reference to 25°C, I_D=1mA
V_GS=10V, I_D=2A
Min. Typ. Max. Units
700 -
-
V
- 0.6 - V/°C
-
- 2.4 Ω
V_GS(th)
g_fs
I_DSS
I_GSS
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
Gate threshold voltage
Forward transconductance
Drain-source leakage current
Gate-source leakage current
Total gate charge ²
Gate-source charge
Gate-drain ("Miller") charge
Turn-on delay time ²
Rise time
Turn-off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer capacitance
V_DS=V_GS, I_D=250uA
V_DS=20V, I_D=1A
V_{DS=600V, VGS=0V}
V_DS=480V ,V_GS=0V, Tj = 150°C
V_GS=±30V
I_D=4A
V_DS=480V
V_GS=10V
V_DS=300V
I_D=4A
R_G=10Ω , V_GS=10V
R_D=75Ω
V_GS=0V
V_DS=25V
f=1.0MHz
2
-
4V
- 2.5 -
S
-
- 10 ^uA
-
- 100 uA
-
- ±100 nA
- 16.7 - nC
- 4.1 - nC
- 4.9 - nC
- 11 - ns
- 8.3 - ns
- 23.8 - ns
- 8.2 - ns
- 950 - pF
- 65 - pF
-
6
- pF
Source-Drain Diode
Symbol
V_SD
I_S
I _SM
Parameter
Forward voltage ²
Continuous source current (body diode)
Pulsed source current (body diode)¹
Test Conditions
I_S= 4A, V_GS=0V
V_D=V_G=0V , V_S=1.3V
Min. Typ. Max. Units
-
- 1.5 V
-
-
4A
-
- 15 A
Notes:
1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.
2.Pulse width <300us, duty cycle <2%.
9/12/2006 Rev.3.1
www.SiliconStandard.com
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