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| MMBT2222A Datasheet, PDF (2/5 Pages) NXP Semiconductors – NPN switching transistor | |||
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MMBT2222A
ELECTRICAL CHARACTERISTICS
(Tamb=25°C unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Delay time
Rise time
Storage time
Fall time
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEX
IEBO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VBE(sat)
fT
td
tr
tS
tf
Test conditions
IC= 10μA, IE=0
IC= 10mA, IB=0
IE=10μA, IC=0
VCB=60V, IE=0
VCE=60V, VBE(off)=3V
VEB= 3V,IC=0
VCE=10V, IC=150mA
VCE=10V, IC= 0.1mA
VCE=10V, IC= 500mA
IC=500 mA, IB= 50mA
IC=150 mA, IB=15mA
IC=500 mA, IB= 50mA
IC=150 mA, IB=15mA
VCE=20V, IC= 20mA
f=100MHz
VCC=30V, VBE(off)=-0.5V
IC=150mA , IB1= 15mA
VCC=30V, IC=150mA
IB1=-IB2=15mA
MIN
75
40
6
100
40
42
0.6
300
TYP MAX UNIT
V
V
V
10
nA
10
nA
0.1
μA
300
1
0.3
V
2.0
1.2
V
MHz
10
nS
25
nS
225
nS
60
nS
CLASSIFICATION OF hFE(1)
Rank
Range
L
100-200
H
200-300
12/04/2007 Rev.1.00
www.SiliconStandard.com
2
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