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MB2S Datasheet, PDF (2/3 Pages) General Semiconductor – MINIATURE GLASS PASSIVATED SINGLE-PHASE SURFACE MOUNT BRIDGE RECTIFIER
MB2S thru MB10S
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(TA=25oC unless otherwise noted)
Parameter
Symbols MB2S MB4S MB6S MB8S MB10S Units
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward output rectified current
(see Fig.1)
on glass-epoxy P.C.B.
on aluminum substrate
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC Method)
Rating for fusing (t < 8.3ms)
VRRM
VRMS
VDC
IF(AV)
IFSM
I2t
200
400
600
800
1000
140
280
420
560
700
200
400
600
800
1000
0.5 (1)
0.8 (2)
35.0
5.0
Maximum instantaneous forward voltage drop per leg at 0.4A
VF
Maximum DC reverse current at
rated DC blocking voltage per leg
TA = 25oC
TA = 125oC
IR
RθJA
Typical thermal resistance per leg
RθJA
RθJL
Typical junction capacitance per leg at 4.0V, 1.0MHz
CJ
1.0
5.0
100
85 (1)
70 (2)
20 (1)
13
Operating junction and storage temperature range
TJ, TSTG
-55 to +150
Notes: 1. On glass epoxy P.C.B. mounted on 0.05 x 0.05" (1.3 x 1.3mm) pads
2. On aluminum substrate P.C.B. with an area of 0.8" x 0.8" (20 x 20mm) mounted on 0.05 x 0.05" (1.3 x 1.3mm) solder pad
Volts
Volts
Volts
Amp
Amps
A2sec
Volt
uA
oC/W
pF
oC
12/23/2007 Rev.1.00
www.SiliconStandard.com
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