 English |
|
|
|
|
|
|
|
| 2N3904 Datasheet, PDF (2/4 Pages) NXP Semiconductors – NPN switching transistor | |||
| |||
| ◁ |
2N3904
ELECTRICAL CHARACTERISTICS
(Tamb=25 oC unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE1
hFE2
hFE3
VCE(sat)
VBE(sat)
Transition frequency
fT
Delay Time
td
Rise Time
tr
Storage Time
ts
Fall Time
tf
CLASSIFICATION OF hFE1
Rank
O
Range
100-200
Test conditions
IC=10μA, IE=0
IC= 1mA , IB=0
IE= 10μA, IC=0
VCB=60V, IE=0
VCE= 40V, IB=0
VEB= 5V, IC=0
VCE=1V, IC=10mA
VCE=1V, IC=50mA
VCE=1V, IC=100mA
IC=50mA, IB=5mA
IC=50mA, IB=5mA
VCE=20V,IC=10mA,f=100MHz
VCC=3V,VBE=0.5V,
IC=10mA,IB1=1mA
VCC=3V, IC=10mA
IB1=IB2=1mA
Y
200-300
MIN
60
40
6
100
60
30
300
TYP MAX UNIT
V
V
V
0.1
μA
0.1
μA
0.1
μA
400
0.3
V
0.95
V
MHZ
35
ns
35
ns
200
ns
50
ns
G
300-400
03/17/2008 Rev.1.00
www.SiliconStandard.com
2
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese