SSM9987GH Datasheet, PDF (1/5 Pages) Silicon Standard Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

SSM9987GH
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
PRODUCT SUMMARY
Low Gate Charge
Single Drive Requirement
Fast Switching Performance
DESCRIPTION
D
G
S
BV_DSS
R_DS(ON)
I_D
80V
90mΩ
15A
The advanced power MOSFETs from Silicon Standard Corp.
provide the designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G _{D S TO-252(H)}
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(SSM9987GH) are available for low-profile aplications.
Pb-free; RoHS-compliant
G
D
S
TO-251(J)
ABSOLUTE MAXIMUM RATINGS
Symbol
V_DS
V_GS
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
P_D@T_C=25℃
T_STG
T_J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
THERMAL DATA
Symbol
Rthj-c
Rthj-a
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Rating
80
±25
15
9
50
34.7
0.28
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Max.
Max.
Value
3.6
110
Units
℃/W
℃/W
02/27/2008 Rev.1.00
www.SiliconStandard.com
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