SSM9973GM Datasheet, PDF (1/5 Pages) Silicon Standard Corp. – Dual N-channel Enhancement-mode Power MOSFETs

SSM9973GM
Dual N-channel Enhancement-mode Power MOSFETs
Simple drive requirement
Lower gate charge
Fast switching characteristics
Pb-free; RoHS compliant.
DESCRIPTION
BV_D2
D2
D1
D1
I
SO-8
R
G2
S2
G1
S1
BV_DSS
R _DS(ON)
I_D
Advanced Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching, ruggedized
device design, low on-resistance and cost-effectiveness.
G1
D1
G2
The SSM9973M is in an SO-8 package, which is widely preferred for
S1
commercial and industrial surface mount applications. This device is
suitable for low voltage applications such as DC/DC converters.
60V
80mΩ
3.9A
D2
S2
ABSOLUTE MAXIMUM RATINGS
Symbol
V_DS
V_GS
I_D @ T_A=25°C
I_D @ T_A=70°C
I_DM
P_D @ T_A=25°C
T_STG
T_J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
THERMAL DATA
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient³
Rating
60
± 20
3.9
2.5
20
2
0.016
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/°C
°C
°C
Max.
Value
62.5
Unit
°C/W
12/10/2004 Rev.2.03
www.SiliconStandard.com
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