SSM9972GP Datasheet, PDF (1/5 Pages) Silicon Standard Corp. – N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

SSM9972GP,S
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Low gate-charge
Simple drive requirement
Fast switching
Description
D
G
S
The SSM9972GS is in a TO-263 package, which is widely used for
commercial and industrial surface mount applications, and is well suited
for low voltage applications such as DC/DC converters. The through-hole
version, the SSM9972GP in TO-220, is available for low-footprint vertical
mounting. These devices are manufactured with an advanced process,
providing improved on-resistance and switching performance.
BV _DSS
R _DS(ON)
I_D
60V
18mΩ
60A
G _{D S TO-263 (S)}
Pb-free lead finish (second-level interconnect)
G
D
S
TO-220(P)
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D @ T_C=25°C
I_D @ T_C=100°C
I_DM
P_D @ T_C=25°C
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V_GS @ 10V³
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Rating
60
±25
60
38
230
89
0.7
Units
V
V
A
A
A
W
W/°C
T_STG
T_J
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
-55 to 150
°C
-55 to 150
°C
Max.
Max.
Value
1.4
62
Units
°C/W
°C/W
2/16/2005 Rev.1.1
www.SiliconStandard.com
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