SSM9972GI Datasheet, PDF (1/5 Pages) Silicon Standard Corp. – N-channel Enhancement-mode Power MOSFET

SSM9972GI
N-channel Enhancement-mode Power MOSFET
PRODUCT SUMMARY
BV_DSS
60V
R _DS(ON)
18mΩ
I_D
35A
Pb-free; RoHS-compliant TO-220CFM
G
D
S
TO-220CFM (suffix I)
DESCRIPTION
The SSM9972GI achieves fast switching performance
with low gate charge without a complex drive circuit. It
is suitable for low voltage applications such as DC/DC
converters and general switching circuits.
The SSM9972GI is in TO-220CFM for through-hole
mounting where a small footprint is required on the board,
and/or an external heatsink is to be attached.
These devices are manufactured with an advanced process,
providing improved on-resistance and switching performance.
ABSOLUTE MAXIMUM RATINGS
Symbol
V_DS
V_GS
I_D
I_DM
P_D
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current, T_C = 25°C
Pulsed drain current¹
T_C = 100°C
Total power dissipation, T_C = 25°C
Linear derating factor
Value
60
±25
35
22
120
31
0.25
Units
V
V
A
A
A
W
W/°C
T_STG
T_J
Storage temperature range
Operating junction temperature range
THERMAL CHARACTERISTICS
Symbol
R_ΘJC
R_ΘJA
Parameter
Maximum thermal resistance, junction-case
Maximum thermal resistance, junction-ambient
Notes:
1. Pulse width must be limited to avoid exceeding the safe operating area.
2. Pulse width <300us, duty cycle <2%.
-55 to 150
°C
-55 to 150
°C
Value
4
62
Units
°C/W
°C/W
9/20/2006 Rev.3.1
www.SiliconStandard.com
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