SSM9928O Datasheet, PDF (1/6 Pages) Silicon Standard Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

SSM9928O
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
PRODUCT SUMMARY
Low on-resistance
Capable of 2.5V gate drive
Optimal DC/DC battery application
DESCRIPTION
The Advanced Power MOSFETs from Silicon Standard Corp.
provide the designer with the best combination of fast
switching, ruggedized device design, ultra low on-resistance
and cost-effectiveness.
D1
D2
G1
G2
S1
S2
BV_DSS
R_DS(ON)
I_D
20V
23mΩ
5A
Pb-free; RoHS-compliant
ABSOLUTE MAXIMUM RATINGS
Symbol
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
T_STG
T_J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current³, V_GS @ 4.5V
Drain Current³, V_GS @ 4.5V
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
TH_TERMAL DATA
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient³
G2
S2
S2
D2
TSSOP-8
G1
S1
S1
D1
Rating
20
±12
5
3.5
25
1
0.008
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Max.
Value
125
Unit
℃/W
03/11/2007 Rev.1.00
www.SiliconStandard.com
1