SSM9926TGO Datasheet, PDF (1/5 Pages) Silicon Standard Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

PRODUCT SUMMARY
Low on-resistance
Capable of 2.5V gate drive
Surface mount package
DESCRIPTION
SSM9926TGO
N-CHANNEL ENHANC₈ EMENT MODE
POWER MOSFET
A
t
D1
D2
G1
G2
S1
S2
The Advanced Power MOSFETs from Silicon Standard Corp.
provide the designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
BV_DSS
R_DS(ON)
I_D
8
20V
32mΩ
4.7A
Pb-free; RoHS-compliant
ABSOLUTE MAXIMUM RATINGS
G2
S2
S2
D2
TSSOP-8
G1
S1
S1
D1
Symbol
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
T_STG
T_J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
THE_TRMAL DATA
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient³
Rating
20
±12
4.7
3.8
20
1
0.008
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Max.
Value
125
Unit
℃/W
03/11/2007 Rev.1.00
www.SiliconStandard.com
1
D