SSM9922 Datasheet, PDF (1/5 Pages) Silicon Standard Corp. – DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

SSM9922(G)EO
DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
Low on-resistance
Capable of 2.5V gate drive
Ideal for DC/DC battery applications
Description
G2
S2
S2
D2
TSSOP-8
Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G1
S1
S1
D1
BV _DSS
R_DS(ON)
I_D
20V
15mΩ
6.8A
D1
D2
G1
G2
S1
S2
This device is available with Pb-free lead finish (second-level interconnect) as SSM9922GEO.
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
V_DS
V_GS
I_D @ T_A=25°C
I_D @ T_A=70°C
I_DM
P_D @ T_A=25°C
Drain-Source Voltage
Gate-Source Voltage
Drain Current³, V_{G S} @ 4.5V
Drain Current³, V_GS @ 4.5V
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
20
±12
6.8
5.4
25
1
0.008
V
V
A
A
A
W
W/°C
T_STG
T_J
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
°C
-55 to 150
°C
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient³
Max.
Value
125
Unit
°C/W
Rev.2.01 12/06/2004
www.SiliconStandard.com
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