SSM9916H Datasheet, PDF (1/6 Pages) List of Unclassifed Manufacturers – N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

SSM9916H,J
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Low on-resistance
Capable of 2.5V gate drive
Low drive current
Simple drive requirement
Description
D
G
S
Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D @ T_C=25°C
I_D @ T_C=125°C
I_DM
P_D @ T_C=25°C
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V_GS @ 4.5V
Continuous Drain Current, V_GS @ 4.5V
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
T_STG
T_J
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
BV _DSS
R_DS(ON)
I_D
18V
25mΩ
35A
GD _S
TO-252(H)
GD
S
TO-251(J)
Rating
18
± 12
35
16
90
50
0.4
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/°C
°C
°C
Max.
Max.
Value
2.5
110
Unit
°C/W
°C/W
Rev.2.02 1/29/2004
www.SiliconStandard.com
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