SSM9915K Datasheet, PDF (1/4 Pages) Silicon Standard Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

SSM9915K
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Simple drive requirement
Lower gate charge
Fast switching characteristic
Description
D
S
D
SOT-223 G
Advanced Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness.
BV_DSS
R_DS(ON)
I_D
20V
50mΩ
6.2A
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D @ T_A=25°C
I_D @ T_A=70°C
I_DM
P_D @ T_A=25°C
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
T_STG
Storage Temperature Range
T_J
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient³
Rating
20
±12
6.2
5
30
3.2
0.025
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/°C
°C
°C
Max.
Value
40
Unit
°C/W
Rev.1.01 4/06/2004
www.SiliconStandard.com
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