SSM9620M Datasheet, PDF (1/6 Pages) Silicon Standard Corp. – P-CHANNEL ENHANCEMENT-MODE POWER MOSFET

SSM9620M
P-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Low on-resistance
Capable of 2.5V drive
Fast switching
Simple drive requirement
Description
D
D
D
D
SO-8
G
S
S
S
BV_DSS
R _DS(ON)
I_D
Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
The SSM9620M is supplied in the SO-8 package, which is widely preferred
for commercial and industrial surface-mount applications. This device is well suited
for low voltage applications such as DC/DC converters.
-20V
20mΩ
-9.5A
D
S
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D @ T_A=25°C
I_D @ T_A=70°C
I_DM
P_D @ T_A=25°C
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current^1,2
Total Power Dissipation
Linear Derating Factor
T_STG
T_J
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-amb
Thermal Resistance Junction-ambient
Rating
- 20
±12
-9.5
-7.6
-76
2.5
0.02
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/°C
°C
°C
Max.
Value
50
Unit
°C/W
Rev.2.02 3/06/2004
www.SiliconStandard.com
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