SSM95T07GP Datasheet, PDF (1/6 Pages) Silicon Standard Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

SSM95T07GP
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
PRODUCT SUMMARY
Simple Drive Requirement
Lower On-resistance
Fast Switching Characteristic
RoHS Compliant
D
BV_DSS
R_DS(ON)
G
I_D
S
DESCRIPTION
The advanced power MOSFETs from Silicon Standard Corp.
provide the designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-
industrial power applications and suited for low voltage applications
such as DC/DC converters.
G
D
S
75V
5mΩ
80A
TO-220(P)
ABSOLUTE MAXIMUM RATINGS
Symbol
V_DS
V_GS
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
P_D@T_C=25℃
E_AS
T_STG
T_J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V_GS @ 10V³
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy⁴
Storage Temperature Range
Operating Junction Temperature Range
THERMAL DATA
Symbol
Parameter
Rthj-c
Rthj-a
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Rating
75
±20
80
70
320
300
2
450
-55 to 175
-55 to 175
Units
V
V
A
A
A
W
W/℃
mJ
℃
℃
Max.
Max.
Value
0.5
62
Units
℃/W
℃/W
07/11/2007 Rev.1.00
www.SiliconStandard.com
1