SSM9585GM Datasheet, PDF (1/5 Pages) Silicon Standard Corp. – P-channel Enhancement-mode Power MOSFET

SSM9585GM
P-channel Enhancement-mode Power MOSFET
Simple drive requirement
D
Lower gate charge
Fast switching characteristics
G
Pb-free; RoHS compliant.
S
BV_DSS
R _DS(ON)
I_D
DESCRIPTION
Advanced Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
D
D
D
D
The SSM9585GM is in the SO-8 package, which is widely preferred for
commercial and industrial surface mount applications. This device is suitable
for low voltage applications such as DC/DC converters.
SO-8
-80V
180mΩ
-2.7A
G
S
S
S
ABSOLUTE MAXIMUM RATINGS
Symbol
V_DS
V_GS
I_D @ T_A=25°C
I_D @ T_A=70°C
I_DM
P_D @ T_A=25°C
T_STG
T_J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
THERMAL DATA
Symbol
RΘj-a
Parameter
Maximum Thermal Resistance Junction-ambient³
Rating
-80
±25
-2.7
-2.1
-20
2.5
0.02
-55 to 150
-55 to 150
Value
50
Units
V
V
A
A
A
W
W/°C
°C
°C
Unit
°C/W
3/21/2005 Rev.2.01
www.SiliconStandard.com
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