SSM9563GM Datasheet, PDF (1/5 Pages) Silicon Standard Corp. – P-channel Enhancement-mode Power MOSFET

SSM9563GM
P-channel Enhancement-mode Power MOSFET
PRODUCT SUMMARY
BV_DSS
R _DS(ON)
I_D
-40V
40mΩ
-6A
Pb-free; RoHS-compliant SO-8
D
D
D
D
SO-8
G
S
SS
DESCRIPTION
The SSM9563GM acheives fast switching performance
with low gate charge without a complex drive circuit. It
is suitable for low voltage applications such as DC/DC
converters and general load-switching circuits.
The SSM9563GM is supplied in an RoHS-compliant
SO-8 package, which is widely used for medium power
commercial and industrial surface mount applications.
ABSOLUTE MAXIMUM RATINGS
Symbol
V_DS
V_GS
I_D
I_DM
P_D
T_STG
T_J
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current³, T_C = 25°C
Pulsed drain current¹
T_C = 70°C
Total power dissipation, T_C = 25°C
Linear derating factor
Storage temperature range
Operating junction temperature range
Value
-40
±25
-6
-4.8
-30
2.5
0.02
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/°C
°C
°C
THERMAL CHARACTERISTICS
Symbol
R_ΘJA
Parameter
Maximum thermal resistance, junction-ambient³
Value
50
Units
°C/W
Notes:
1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.
2.Pulse width <300us, duty cycle <2%.
3.Mounted on a square inch of copper pad on FR4 board; 125°C/W when mounted on the minimum pad area required for soldering.
9/26/2006 Rev.3.01
www.SiliconStandard.com
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